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PD - 95071A
SMPS MOSFET
Applications
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IRFR3708PBF IRFU3708PbF
HEXFET(R) Power MOSFET
High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Lead-Free
VDSS
30V
RDS(on) max
12.5m
ID
61A
l l
Benefits
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Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current
D-Pak IRFR3708 I-Pak IRFU3708
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
30 12 61 51 244 87 61 0.58 -55 to + 175
Units
V V A W W W/C C
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient
Typ.
--- --- ---
Max.
1.73 50 110
Units
C/W
* When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994
Notes through are on page 9
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IRFR/U3708PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- --- Gate Threshold Voltage 0.6 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.028 8.5 10.0 15.0 --- --- --- --- --- Max. Units --- V --- V/C 12.5 14.0 m 30.0 2.0 V 20 A 100 200 nA -200 Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A VGS = 2.8V, ID = 7.5A VDS = VGS, ID = 250A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 12V VGS = -12V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 49 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 24 6.7 5.8 14 7.2 50 17.6 3.7 2417 707 52 Max. Units Conditions --- S VDS = 15V, ID = 50A --- ID = 24.8A --- nC VDS = 15V --- VGS = 4.5V 21 VGS = 0V, ID = 24.8A, VDS = 15V --- VDD = 15V --- ID = 24.8A ns --- RG = 0.6 --- VGS = 4.5V --- VGS = 0V --- VDS = 15V --- pF = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
213 62
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units --- --- --- --- 61 244 1.3 --- 62 96 65 105 V ns nC ns nC A
VSD trr Qrr trr Qrr
--- 0.88 --- 0.80 --- 41 --- 64 --- 43 --- 70
Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = 31A, VGS = 0V TJ = 125C, IS = 31A, VGS = 0V TJ = 25C, IF = 31A, VR=20V di/dt = 100A/s TJ = 125C, IF = 31A, VR=20V di/dt = 100A/s
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IRFR/U3708PbF
1000
VGS TOP 10.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V
1000
VGS 10.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
2.7V
2.7V
10
10
20s PULSE WIDTH Tj = 25C
1 0.1 1 10 100 1 0.1 1
20s PULSE WIDTH Tj = 175C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 61A
I D , Drain-to-Source Current (A)
2.0
TJ = 25 C
1.5
100
TJ = 175 C
1.0
0.5
10 2.0
V DS = 15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFR/U3708PbF
3500
2800
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
10
ID = 24.8A
VDS = 15V
8
C, Capacitance (pF)
Ciss
2100
6
1400
4
Coss
700
2
0 1
Crss
10 100
0 0 10 20 30 40 50
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
ID , Drain Current (A)
100
TJ = 175 C
10us 100 100us
10
TJ = 25 C
10
1ms 10ms
1
0.1 0.2
V GS = 0 V
0.8 1.4 2.0 2.6
1 0.1
TC = 25 C TJ = 175 C Single Pulse
1 10 100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFR/U3708PbF
70
VDS
LIMITED BY PACKAGE
RD
60
VGS RG
D.U.T.
+
ID , Drain Current (A)
50 40 30
-VDD
10V
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
20
VDS
10 0 25 50 75 100 125 150 175
90%
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFR/U3708PbF
RDS ( on ) , Drain-to-Source On Resistance ) (
0.025
( , RDS(on) Drain-to -Source On Resistance)
0.017
0.020
0.015
0.013
0.015 VGS = 4.5V 0.010 VGS = 10V 0.005 0 50 100 150 200 250 300 ID , Drain Current ( A )
0.011
0.009
ID = 31A
0.007 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
600
EAS , Single Pulse Avalanche Energy (mJ)
VG
VGS
3mA
Charge
IG ID
480
ID 10A 20.7A BOTTOM 24.8A TOP
Current Sampling Resistors
Fig 14a&b. Gate Charge Test Circuit and Waveform
360
240
15V
120
V(BR)DSS tp
VDS L
DRIVER
RG
20V
D.U.T
IAS
+ - VDD
0 25 50 75 100 125 150 175
A
I AS
tp
0.01
Starting TJ , Junction Temperature ( C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
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IRFR/U3708PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120 WIT H ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INTERNATIONAL RECTIFIER LOGO
IRFU120 12 916A 34
ASSEMBLY LOT CODE
DATE CODE YEAR 9 = 1999 WEEK 16 LINE A
OR
PART NUMBER INTERNATIONAL RECTIFIER LOGO
IRFU120 12 34
DATE CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = ASSEMBLY SIT E CODE
ASSEMBLY LOT CODE
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IRFR/U3708PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: THIS IS AN IRF U120 WIT H ASS EMBLY LOT CODE 5678 ASS EMB LED ON WW 19, 1999 IN T HE AS SEMBLY LINE "A" Note: "P" in as s embly line pos ition indicates "Lead-Free" INT ERNAT IONAL RE CT IF IER LOGO PART NUMBER
IRFU120 919A 56 78
AS SEMBLY LOT CODE
DAT E CODE YE AR 9 = 1999 WE EK 19 LINE A
OR
INT ERNAT IONAL RECT IFIER LOGO PART NUMB ER
IRFU120 56 78
AS S EMBLY LOT CODE
DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS SEMBLY SIT E CODE
8
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IRFR/U3708PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 300s; duty cycle 2%. Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
Starting TJ = 25C, L = 0.7 mH
RG = 25, IAS = 24.8 A.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information12/04
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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